MB85RS512TYPN-G-AWEWE1

MB85RS512TYPN-G-AWEWE1 - 512Kbit FRAM Memory IC

The MB85RS512TYPN-G-AWEWE1 is a high-performance 512Kbit Ferroelectric RAM (FRAM) memory IC featuring an SPI interface and exceptional endurance characteristics. This non-volatile memory solution combines the speed of SRAM with the non-volatility of Flash, making it ideal for aerospace, automotive, industrial, and telecommunications applications requiring reliable data retention and fast write cycles.

Key Features & Benefits

• High-Speed Performance: 50 MHz clock frequency with 9 ns access time for rapid data operations
• Wide Operating Range: 1.8V to 3.6V supply voltage, -40°C to 125°C temperature range
• Superior Endurance: FRAM technology provides virtually unlimited write cycles (10¹⁴ read/write cycles)
• Instant Write: No write delays - data is written at bus speed without page buffers
• Low Power Consumption: Ideal for battery-powered and energy-efficient designs
• Industry Standard Interface: SPI serial interface for easy integration
• Compact Package: 8-DFN (5x6mm) surface mount package saves board space

Applications

This FRAM memory IC is engineered for mission-critical applications including data logging systems, industrial automation controllers, automotive ECUs, smart meters, medical devices, and aerospace instrumentation where data integrity and long-term reliability are paramount.

Quality & Authenticity Guarantee

All MB85RS512TYPN-G-AWEWE1 units are sourced from authorized distributors with full manufacturer documentation and traceability. Each device is supplied in factory-sealed Tape & Reel packaging with complete compliance certification and RoHS conformity.

• MB85RS512TYPN-G-AWEWE1.pdf