MB85RS512TYPN-GS-AME1

MB85RS512TYPN-GS-AME1 - 512Kbit FRAM Memory IC

The MB85RS512TYPN-GS-AME1 from RAMXEED is a high-performance 512Kbit Ferroelectric Random Access Memory (FRAM) IC designed for mission-critical applications requiring exceptional reliability, fast write speeds, and virtually unlimited write endurance.

Key Features & Benefits

• Superior Endurance: FRAM technology delivers 10 trillion write cycles—far exceeding traditional EEPROM and Flash memory
• Ultra-Fast Writes: Write data at bus speed with no write delays, enabling real-time data logging and critical parameter storage
• Low Power Consumption: Ideal for battery-powered and energy-sensitive designs in portable and remote applications
• Non-Volatile Storage: Retains data for 10+ years without power, ensuring data integrity in power-loss scenarios
• Industrial-Grade Reliability: Built for demanding environments in aerospace, automotive, industrial control, medical devices, and telecommunications

Typical Applications

This FRAM IC is engineered for applications where data integrity, write endurance, and speed are paramount:

• Aerospace flight data recorders and avionics systems
• Automotive ECUs, ADAS, and black box event logging
• Industrial PLCs, smart meters, and process control
• Medical device parameter storage and patient data logging
• Telecommunications infrastructure and network equipment

Why Choose RAMXEED?

As an authorized distributor, we guarantee 100% authentic components with full traceability, RoHS/REACH compliance, and long lifecycle availability. Every MB85RS512TYPN-GS-AME1 ships with complete documentation and quality certifications to support your design-in process and regulatory requirements.

Need volume pricing, custom packaging, or technical support? Contact our engineering team for personalized assistance with your design requirements.

• MB85RS512TYPN-GS-AME1.pdf