Micron Technology Inc. MT29F2G08ABBEAH4-ITX:E TR

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Regular price Dhs. 355,874.90
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Micron MT29F2G08ABBEAH4-ITX:E TR - 2Gbit NAND Flash Memory

The MT29F2G08ABBEAH4-ITX:E TR from Micron Technology is a high-reliability 2Gbit parallel NAND flash memory solution designed for industrial applications requiring long lifecycle support and proven performance in demanding environments.

Key Features & Benefits

  • 2Gbit Memory Capacity - 256M x 8 organization provides ample storage for embedded systems
  • Industrial Temperature Range - Operates reliably from -40°C to 85°C for harsh environments
  • Parallel Interface - Fast, straightforward integration with legacy and new designs
  • Low Voltage Operation - 1.7V to 1.95V supply voltage for power-efficient applications
  • Surface Mount Package - Compact 63-VFBGA (9x11mm) footprint saves board space
  • Tape & Reel Packaging - Ready for automated assembly processes

Ideal Applications

Perfect for aerospace, automotive, industrial control systems, telecommunications equipment, and medical devices where reliability, traceability, and long-term availability are critical requirements.

Why Choose This Component?

As an authorized distributor, we provide genuine Micron components with full traceability, technical support, and lifecycle management. This industrial-grade NAND flash memory offers the reliability and longevity your critical applications demand.

Product attributes Property Value
Manufacturer Micron Technology Inc.
Product Series
Packaging | Tape & Reel (TR)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page -
Access Time -
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY