-
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
NAND02GW3B2DN6E
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | Dhs. 17.76 AED | Dhs. 17.76 AED |
| 15+ | Dhs. 17.19 AED | Dhs. 257.85 AED |
| 25+ | Dhs. 16.82 AED | Dhs. 420.50 AED |
| 50+ | Dhs. 15.89 AED | Dhs. 794.50 AED |
| 100+ | Dhs. 14.02 AED | Dhs. 1,402.00 AED |
| N+ | Dhs. 2.80 AED | Price Inquiry |
Couldn't load pickup availability
Micron NAND02GW3B2DN6E - 2Gbit NAND Flash Memory IC
The NAND02GW3B2DN6E from Micron Technology is a high-density 2Gbit NAND Flash memory IC designed for embedded systems requiring reliable non-volatile storage. With a 256M x 8 organization and parallel interface, this component delivers fast 25ns access time and operates across an industrial temperature range of -40°C to 85°C.
Key Features & Benefits:
- High-Density Storage: 2Gbit capacity in a compact 48-TSOP surface mount package
- Fast Performance: 25ns access time and write cycle for responsive data operations
- Industrial Grade: -40°C to 85°C operating temperature range for demanding environments
- Flexible Power: 2.7V to 3.6V supply voltage for versatile system integration
- Parallel Interface: Standard parallel interface for straightforward integration
- RoHS Compliant: Environmentally friendly and regulation-compliant
Ideal Applications:
Perfect for automotive electronics, industrial control systems, telecommunications equipment, embedded computing platforms, and any application requiring reliable, long-lifecycle non-volatile memory with full manufacturer traceability.
Authorized Distributor Guarantee:
We supply only authorized distributor stock with complete manufacturer documentation, traceability certificates, and warranty support. Every unit is sourced through official channels to ensure authenticity and long-term availability for your critical programs.
| Product attributes | Property Value |
| Manufacturer | Micron Technology Inc. |
| Product Series | |
| Packaging | Tray | Tray |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP |
| ROHS |  |
NAND02GW3B2DN6E.pdf