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Renesas R1LP5256ESP-7SR#S0 - High-Performance 256Kbit SRAM Memory IC

The R1LP5256ESP-7SR#S0 from Renesas Electronics is a high-speed, low-power 256Kbit Static Random Access Memory (SRAM) designed for embedded applications requiring fast, reliable volatile memory storage. With a 70ns access time and parallel interface, this SRAM delivers exceptional performance for data buffering, cache memory, and temporary storage in industrial, automotive, and telecommunications systems.

Key Features & Benefits

  • Fast Access Time: 70ns read/write cycle ensures rapid data processing
  • Flexible Memory Organization: 32K x 8 configuration optimized for byte-wide operations
  • Wide Operating Voltage: 4.5V to 5.5V supply range for compatibility with standard 5V systems
  • Industrial Temperature Range: Operates reliably from 0°C to 70°C
  • Surface Mount Package: 28-SOIC/SOP for automated assembly and space-efficient PCB design
  • RoHS Compliant: Environmentally friendly, lead-free construction

Typical Applications

This SRAM is ideal for embedded controllers, data acquisition systems, networking equipment, industrial automation, point-of-sale terminals, and any application requiring high-speed temporary data storage with parallel interface access.

All specifications are subject to manufacturer's datasheet. Contact us for volume pricing, custom packaging options, and technical support.

Product attributes Property Value
Manufacturer Renesas Electronics Corporation
Product Series
Packaging Tape & Reel (TR) | Tape & Reel (TR)
Memory Type Volatile
Memory Format SRAM
Technology SRAM
Memory Size 256Kbit
Memory Organization 32K x 8
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 70ns
Access Time 70 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 28-SOIC (0.330", 8.40mm Width)
Supplier Device Package 28-SOP
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY