Renesas Electronics Corporation R1LV0108ESF-5SI#S0

Renesas R1LV0108ESF-5SI#S0 - 1Mbit SRAM Memory IC

The R1LV0108ESF-5SI#S0 from Renesas Electronics is a high-performance 1Mbit static RAM (SRAM) memory IC designed for applications requiring fast, reliable volatile memory with parallel interface access. With a 55ns access time and 128K x 8 memory organization, this SRAM delivers exceptional performance for embedded systems, industrial controls, telecommunications equipment, and data buffering applications.

Key Features & Benefits

• Fast Access Time: 55ns access and write cycle time ensures rapid data retrieval and storage
• Flexible Memory Organization: 128K x 8 configuration optimized for byte-wide data operations
• Wide Operating Range: Functions reliably from -40°C to 85°C in industrial temperature environments
• Low Voltage Operation: 2.7V to 3.6V supply voltage range for power-efficient designs
• Parallel Interface: Standard parallel bus interface for straightforward integration
• Surface Mount Package: 32-TSOP I (32-TFSOP) package suitable for automated assembly
• RoHS Compliant: Meets environmental standards for lead-free manufacturing

Ideal Applications

This SRAM is perfectly suited for embedded systems requiring high-speed data buffering, cache memory, lookup tables, industrial automation controllers, telecommunications infrastructure, medical devices, and automotive electronics where reliable operation across extended temperature ranges is critical.

Why Choose This SRAM?

Renesas Electronics is a trusted leader in semiconductor manufacturing with decades of experience in memory solutions. The R1LV0108ESF-5SI#S0 offers proven reliability, consistent availability for long product lifecycles, and comprehensive technical support—making it an excellent choice for designs requiring dependable, high-speed memory performance.

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