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Renesas RM24C512C-LSNI-T - High-Reliability 512Kbit CBRAM Memory IC

The RM24C512C-LSNI-T from Renesas Electronics is a cutting-edge 512Kbit CBRAM (Conductive Bridging RAM) memory IC from the innovative Mavriq™ series. This non-volatile memory solution delivers exceptional reliability and performance for embedded systems requiring fast, low-power memory with superior endurance.

Key Features & Benefits

  • Advanced CBRAM Technology: Non-volatile memory with virtually unlimited write endurance and fast write cycles
  • I2C Interface: Industry-standard serial interface operating at 1 MHz for easy integration
  • Wide Operating Voltage: 1.65V to 3.6V supply range for flexible power design
  • Industrial Temperature Range: Reliable operation from -40°C to 85°C
  • Compact 8-SOIC Package: Space-saving surface mount design (3.90mm width)
  • Fast Write Performance: 100µs word write, 5ms page write cycle time
  • 128-Byte Page Size: Optimized memory organization for efficient data handling

Applications

Ideal for industrial automation, automotive electronics, IoT devices, medical equipment, and any application requiring reliable non-volatile data storage with high write endurance and low power consumption.

Why Choose HQICKEY?

At HQICKEY, we guarantee 100% authentic Renesas components with full manufacturer warranty support. Our global logistics network ensures fast delivery, and our technical team provides expert support for your design needs.

Related Products

Explore our complete range of Memory Solutions including SRAM, DRAM, Flash, EEPROM, and other non-volatile memory technologies from leading manufacturers.

Technical Resources & Support

Need datasheets, application notes, or technical guidance? Visit our Technical Blog for the latest semiconductor industry insights, design tips, and product announcements.

Order your RM24C512C-LSNI-T today and experience the HQICKEY difference in quality and service!

Product attributes Property Value
Manufacturer Renesas Electronics Corporation
Product Series Mavriq™
Packaging |
Memory Type Non-Volatile
Memory Format CBRAM®
Technology CBRAM
Memory Size 512Kbit
Memory Organization 128 Bytes Page Size
Memory Interface I2C
Clock Frequency 1 MHz
Write Cycle Time - Word, Page 100µs, 5ms
Access Time -
Voltage - Supply 1.65V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

No datasheet available. Please contact sales@hqickey.com for the latest datasheet.