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TH58BYG2S3HBAI6
Regular price
Dhs. 355,892.34
Regular price
Dhs. 374,623.52
Sale price
Dhs. 355,892.34
| Quantity | Unit Price | Total Price |
|---|---|---|
| 1 | Dhs. 355,892.34 AED | Dhs. 355,892.34 AED |
| 15+ | Dhs. 344,653.64 AED | Dhs. 5,169,804.60 AED |
| 25+ | Dhs. 337,161.17 AED | Dhs. 8,429,029.25 AED |
| 50+ | Dhs. 318,429.99 AED | Dhs. 15,921,499.50 AED |
| 100+ | Dhs. 280,967.64 AED | Dhs. 28,096,764.00 AED |
| N+ | Dhs. 56,193.53 AED | Price Inquiry |
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Recycling Electronic Components
Kioxia TH58BYG2S3HBAI6 - High-Reliability SLC NAND Flash Memory
The TH58BYG2S3HBAI6 from Kioxia America's Benand™ series delivers exceptional reliability and performance for industrial, automotive, and mission-critical applications. This 4Gbit SLC NAND flash memory component features built-in ECC (Error Correction Code) and advanced wear-leveling algorithms, ensuring data integrity and extended lifecycle in demanding environments.
Key Features & Benefits
- Superior Reliability: SLC (Single-Level Cell) technology provides the highest endurance and data retention among NAND flash types
- Industrial Temperature Range: Operates reliably from -40°C to 85°C for harsh environment applications
- Fast Access Performance: 25ns access time and write cycle time for responsive system operation
- Compact Footprint: 67-VFBGA (6.5x8mm) surface mount package optimizes board space
- Wide Voltage Range: 1.7V to 1.95V supply voltage for flexible power design
- Parallel Interface: Standard parallel interface simplifies integration with existing designs
Ideal Applications
Perfect for automotive ECUs, industrial controllers, medical devices, telecommunications equipment, aerospace systems, and any application requiring long-term data retention and high write endurance.
RoHS compliant for environmental responsibility. Authorized distributor with full traceability and quality assurance.
| Product attributes | Property Value |
| Manufacturer | Kioxia America, Inc. |
| Product Series | Benand™ |
| Packaging | | Tray |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 67-VFBGA |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| ROHS |  |
TH58BYG2S3HBAI6.pdf
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