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Winbond Electronics

W66CP2NQQAGJ

Regular price Dhs. 16.60
Regular price Dhs. 17.46 Sale price Dhs. 16.60
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Recycling Electronic Components

Winbond W66CP2NQQAGJ - High-Performance LPDDR4 Mobile DRAM

The W66CP2NQQAGJ from Winbond Electronics is a cutting-edge 4Gbit LPDDR4 SDRAM designed for mobile and embedded applications requiring high-speed, low-power memory solutions. With a clock frequency of 1.867 GHz and ultra-fast 3.6 ns access time, this memory chip delivers exceptional performance for smartphones, tablets, automotive systems, and IoT devices.

Key Features & Benefits

  • High-Speed Performance: 1.867 GHz clock frequency with 3.6 ns access time for rapid data processing
  • Low Power Consumption: LPDDR4 technology optimized for mobile applications with dual voltage supply (1.06V-1.17V, 1.7V-1.95V)
  • Large Capacity: 4Gbit (128M x 32) memory organization provides ample storage for demanding applications
  • Wide Temperature Range: Operates reliably from -40°C to 105°C (TC), ideal for automotive and industrial environments
  • Compact Surface Mount Package: 200-TFBGA (10x14.5mm) for space-constrained designs
  • RoHS Compliant: Environmentally friendly and meets international standards

Applications

Perfect for smartphones, tablets, automotive infotainment systems, industrial IoT devices, wearables, and embedded computing platforms requiring high-performance, low-power memory solutions.

Why Choose Winbond W66CP2NQQAGJ?

Winbond Electronics is a trusted leader in semiconductor memory solutions with decades of experience. The W66CP2NQQAGJ combines proven reliability, cutting-edge LPDDR4 technology, and comprehensive quality assurance to deliver consistent performance in mission-critical applications. Backed by full technical documentation and global support, this memory chip is the ideal choice for engineers and designers seeking high-quality, long-lifecycle components.

Product attributes Property Value
Manufacturer Winbond Electronics
Product Series
Packaging Tray | Tray
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR4
Memory Size 4Gbit
Memory Organization 128M x 32
Memory Interface LVSTL_11
Clock Frequency 1.867 GHz
Write Cycle Time - Word, Page 18ns
Access Time 3.6 ns
Voltage - Supply 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature -40°C ~ 105°C (TC)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 200-TFBGA
Supplier Device Package 200-TFBGA (10x14.5)
ROHS RoHS Compliant - Hazardous Substance Free Electronic Components | HQICKEY

No datasheet available. Please contact sales@hqickey.com for the latest datasheet.

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